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Thursday, October 8, 2020 | History

2 edition of Minority carrier processes and recombination at point and extended defects in silicon found in the catalog.

Minority carrier processes and recombination at point and extended defects in silicon

J. A. Davidson

Minority carrier processes and recombination at point and extended defects in silicon

by J. A. Davidson

  • 309 Want to read
  • 36 Currently reading

Published by UMIST in Manchester .
Written in English


Edition Notes

StatementJ.A. Davidson ; supervised by J.H. Evans-Freeman..
ContributionsEvans-Freeman, J. H., Electrical Engineering and Electronics.
ID Numbers
Open LibraryOL16565229M

Nonradiative electron–hole recombination is the bottleneck to efficient kesterite thin-film solar cells. We have performed a search for active point defect recombination centers using first-principles calculations. We show that the anion vacancy in Cu2ZnSnS4 (CZTS) is electrically benign without a donor level in the band gap. VS can still act as an efficient nonradiative site Cited by: The minority carrier at the surface normally determines the rate of recombination. This is often but not necessarily the bulk minority carrier and thus in n‐type Si, a lower hole to electron ratio (p s /n s) would reduce surface recombination. This reduction can be achieved in two distinct by:

Noise Analysis of Very Shallow Junctions in Silicon; Influence of Extended Defects Subthreshold Excess Noise Behaviour in LDD Irradiated MOS Transistors and Its Application for Hardness Evaluation Characterization of SiO 2 Deposition by Low-Temperature Plasma and Photo CVD Using Low-Frequency Noise Measurements. We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication by: 1.

Electronic components have a wide range of failure can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other semiconductor devices, problems in the device package may cause failures due to . As part of the effort to increase the contribution of solar cells (photovoltaics) to our energy mix, this book addresses three main areas: making existing technology cheaper, promoting advanced technologies based on new architectural designs, and developing new materials to .


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Minority carrier processes and recombination at point and extended defects in silicon by J. A. Davidson Download PDF EPUB FB2

Kvit, S. Oktyabrsky, in Encyclopedia of Materials: Science and Technology, 2 Radiative Centers Associated with Dislocations. The perturbation introduced by extended defects, such as dislocations, also have relevance to the performance of II–VI optical and electrical properties of such defects are important since they can affect carrier transport and recombination processes.

A reduction in minority-carrier lifetime can also be achieved by irradiation with high-energy particles and the subsequent generation of point defects with energy levels at midgap. In Fig. various data on minority carrier lifetime in silicon are compiled.

Defect specific photoconductance: Carrier recombination through surface and other extended crystal imperfections Article (PDF Available) in Journal of Applied Physics (6) Author: Emil Kamieniecki.

Recombination via point defects and their complexes in solar silicon Article in physica status solidi (a) () October with Reads How we measure 'reads'. Although the concept of minority-carrier lifetime is most commonly applied to bulk recombination, a similar notion can be relevant for surface processes.

For example, the effective lifetime observed of minority carriers with uniform concentration in a wafer can be written as (31) 1 τ eff = 1 τ SRH + 2 W A S where S is the value of the Cited by: 5. absorption of intrinsic point defects, the poor knowledge of intrinsic point defect properties even impacts on the proper quantitative treatment of precipitation processes.

Possible implications of non-equilibrium point defects on the minority carrier diffusion length in. Recombination Les hommes discutent, la nature agit. Men argue, nature acts. Voltaire Abstract The various mechanisms and statistics of carrier recombination in semi-conductors including band-band, excitonic, band-impurity (Shockley–Read–Hall kinetics) and Auger recombination are explained.

Also recombination at extended defects and surfaces. Abstract: We present an extended model for the simulation of the effective minority carrier lifetime in 4H-SiC epiwafers after optical excitation. This multilayer model uses measured values (such as doping profile, point defect concentration and capture cross sections, epilayer thickness) as input parameters.

The bulk lifetime and the diffusion. where d is the lattice plane distance and is the Poisson ratio. The introduction of the parameter Ϝ has the effect of removing the singularity at the origin of the dislocation that is present in model of Volterra (Hirth & Lothe, ).For screw dislocations the Peierls-Nabarro model assumes a stress component near the core which spreads out of the by: 6.

An understanding of charge-carrier recombination processes is essential for the development of hybrid metal halide perovskites for photovoltaic applications.

We show that typical measurements of the radiative bimolecular recombination constant in CH3NH3PbI3 are strongly affected by photon reabsorption that masks a much larger intrinsic bimolecular recombination rate by: @article{osti_, title = {High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects}, author = {Castellanos, Sergio and Ekstrom, Kai E.

and Autruffe, Antoine and Jensen, Mallory A. and Morishige, Ashley E. and Hofstetter, Jasmin and Yen, Patricia and Lai, Barry and Stokkan, Gaute and del Canizo.

Surface recombination velocity for n-type silicon as a function of positive and negative dielectric fixed charge concentration in q/cm 2, for an excess minority carrier concentration of 10 15 cm −3, and a variation in the surface recombination of holes and Cited by: Crystalline silicon is the most used semiconductor material for solar cell applications accounting for more than 90% of the market share.

Nowadays, multicrystalline and monocrystalline silicon are mainly produced from directional solidification and Czochralski method, respectively. Solar cells made of these two types of material have shown efficiencies below the theoretical limit due to Author: Guilherme Manuel Morais Gaspar, Antoine Autruffe, José MárioPó.

Recombination processes in InAs/InAsSb type II strained layer superlattice MWIR nBn detectors R. DeWames, J. Schuster, E. DeCuir, N. Dhar Proc. SPIE.Infrared Technology and Applications XLV. Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas.

This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Crystalline Silicon – Properties and Uses 64 Kemmerich, ; Alexander, ; Alexander & Teichler,).

Plastic deformation introduces a variety of EPR-active defects in Si. Some of them denoted as Si-K1, Si-K2, Si-Y, and Si-R have been identified to be associated with the dislocation core, others, namely Si- K3, Si-K4, and Si-K5 with deformation-induced point.

In band-to-band Auger recombination, an electron recombines with a hole, giving its energy to a third electron or hole and no impurities or defects are involved, i.e., it is an intrinsic process and for low injection conditions, the minority carrier lifetime depends on the inverse of the square of the carrier by: 2.

(PA: ) MODEL MULTIPLE LEVELS This is one of the earliest papers to point out that multiple levels may not be independent of each other.

56W2 Watters, R. L., and G. Ludwig MEASUREMENT OF MINORITY CARRIER LIFETIME IN SILICON J. Appl. Phys., vol. 27, pp.May We have developed a pump–probe microscope capable of exciting a single semiconductor nanostructure in one location and probing it in another with both high spatial and temporal resolution.

Experiments performed on Si nanowires enable a direct visualization of the charge cloud produced by photoexcitation at a localized spot as it spreads along the nanowire by: Abstract: In this paper a numerical model is investigated to predict and optimize the quality of Czochralski-grown silicon single crystals.

The different mechanisms governing the formation, transport, recombination, nucleation and growth of point- and micro-defects in the crystal are put together with a view to getting a reliable picture of the entire set of physical effects governing.

Furthermore, the book: Analyzes past research and industrial development of low-cost silicon processes in view of understanding future trends in this field. Discusses challenges and probability of success of various solar silicon processes.

Covers processes that are more environmentally sensitive.CONTENTS Preface xiii Chapter 1 Elementary Materials Science Concepts 3 Atomic Structure 3 Bonding and Types of Solids 7 Molecules and General Bonding Principles 7 Covalently Bonded Solids: Diamond 9 Metallic Bonding: Copper 11 Ionically Bonded Solids: Salt 12 Secondary Bonding 15 Mixed Bonding 18 Kinetic .Characterization of semiconductor materials and methods used to characterize them will be described extensively in this new Noyes series.

Written by experts in each subject area, the series will present the most up-to-date information available in this rapidly advancing field.